PART |
Description |
Maker |
AP01L60H-HF AP01L60H-HF-14 |
100% Avalanche Test, Fast Switching Characteristics
|
Advanced Power Electronics Corp. Advanced Power Electron...
|
KF4N80F |
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
|
MORNSUN Science& Technology Ltd.
|
ES1D ES1B ES1_SERIES_1 ES1 ES1A ES1C |
From old datasheet system SMA ultra fast low-loss controlled avalanche rectifiers(SMA超快速低损耗控制的雪崩整流 SMA ultra fast low-loss controlled avalanche rectifiers 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214AC
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
BYM26G |
Fast Recovery Pack: SOD-64 SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 1400V CURRENT: 2.3A
|
Gulf Semiconductor
|
BYW72 |
Fast Recovery Pack: SOD-64 SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE?00V CURRENT: 3.0A
|
Gulf Semiconductor
|
BYV95C |
Fast Recovery Pack: SOD-57 SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 600V CURRENT: 1.5A
|
Gulf Semiconductor
|
BYW178 |
Ultra Fast Recovery Pack: SOD-64 SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 800V CURRENT: 3.0A
|
Gulf Semiconductor
|
BYV28-50 BYV28-600 BYV28 BYV28-500 BYV28-100 BYV28 |
From old datasheet system Ultra fast low-loss controlled avalanche rectifiers 1.9 A, 50 V, SILICON, RECTIFIER DIODE Ultra fast low-loss controlled avalanche rectifier(超快速低损耗控制的雪崩整流 1.9 A, 200 V, SILICON, RECTIFIER DIODE
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
SIDC04D60F6 SIDC04D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
RGA37A RGA37B RGA37D RGA37G RGA37J RGA37K RGA37M |
Fast Avalanche Diodes
|
Semikron International
|
FR1D FR1B FR1M FR1G FR1J |
Fast Avalanche Diodes
|
Semikron International
|